PIE 30-70万

Power Diode: Trench MOS Barrier Schottky (TMBS), and FRED device designand TCAD simulations
Power MOSFET: Planar VDMOS, Trench Split-Gate VDMOS, and SuperJunction (trench type) device design and TCAD simulations
Develop 60V N-channel Trench Split-Gate VDMOS for a Japanese chip factory
Developing 1200V SiC Schottky Barrier Diode by Silvaco TCAD simulations
Developing 1200V SiC N-Channel Planar VDMOS by Silvaco TCAD simulations

上海某半导体公司